NCP708 datasheet(4/6 Pages) ONSEMI

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NCP708

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ELECTRICAL CHARACTERISTICS − VOLTAGE VERSION 3.3 V

−40

°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.3 V or 2.4 V, whichever is greater; IOUT = 10 mA, CIN = COUT = 4.7 mF, VEN = 0.9 V, unless

otherwise noted. Typical values are at TJ = +25°C. (Note 3)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Operating Input Voltage

VIN

2.4

5.5

Undervoltage lock−out

VIN rising

UVLO

1.2

1.6

1.9

Output Voltage Accuracy

VOUT + 0.3 V ≤ VIN ≤ 5.25 V, IOUT = 0 – 1 A

VOUT

3.25

3.3

3.35

Line Regulation

VOUT + 0.3 V ≤ VIN ≤ 5.25 V, IOUT = 10 mA

RegLINE

Load Regulation

IOUT = 0 mA to 1 A

RegLOAD

Load Transient

Any 200 mA load step from IOUT = 10 mA to

1A or 10 mA to 1 A in 10

ms, COUT = 10 mF

TranLOAD

±60

Dropout voltage (Note 4)

IOUT = 1 A, VOUT(nom) = 3.3 V

VDO

220

330

Output Current Limit

VOUT = 90% VOUT(nom)

ICL

1.1

Quiescent current

IOUT = 0 mA

180

230

Ground current

IOUT = 1 A

IGND

200

Shutdown current

VEN ≤ 0 V, VIN = 2.0 to 5.5 V

0.1

Reverse Leakage Current

in Shutdown

VIN = 5.5 V, VOUT = VOUT(NOM),

VEN < 0.4 V

IREV

1.5

EN Pin High Threshold

EN Pin Low Threshold

VEN Voltage increasing

VEN Voltage decreasing

VEN_HI

VEN_LO

0.9

0.4

EN Pin Input Current

VEN = 5.5 V

IEN

100

500

Turn−on Time

COUT = 4.7 mF,

from assertion EN pin to 98% Vout(nom)

tON

200

Power Supply Rejection Ratio

VIN = 3.8 V,

VOUT = 3.3 V

IOUT = 0.1 A

f = 1 kHz

PSRR

Output Noise Voltage

VOUT = 3.3 V, VIN = 3.6 V, IOUT = 0.1 A

f = 200 Hz to 100 kHz

VNOISE

100

mVrms

Thermal Shutdown Temperature

Temperature increasing from TJ = +25°C

TSD

160

°C

Thermal Shutdown Hysteresis

Temperature falling from TSD

TSDH

−

°C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at

TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

4. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.3 V.

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