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IRGS4064DPBF 数据表(PDF) 2 Page - International Rectifier |
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IRGS4064DPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRGS4064DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 15V, L = 28 μH, RG = 22 Ω. Pulse width limited by max. junction temperature. Rθ is measured at TJ approximately 90°C Refer to AN-1086 for guidelines for measuring V(BR)CES safely
Maximum limits are based on statistical sample size characterization Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA f ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 0.47 — V/°C VGE = 0V, IC = 500μA (25°C-175°C) —1.6 1.91 IC = 10A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — V IC = 10A, VGE = 15V, TJ = 150°C 5,6,7,9, —2.0 — IC = 10A, VGE = 15V, TJ = 175°C 10 ,11 VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 275μA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -11 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 6.9 — S VCE = 50V, IC = 10A, PW = 80μs ICES Collector-to-Emitter Leakage Current — — 25 μAVGE = 0V, VCE = 600V —328 — VGE = 0V, VCE = 600V, TJ = 175°C 8 VFM Diode Forward Voltage Drop — 2.5 3.1 V IF = 10A —1.7 — IF = 10A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max.g Units Ref .F ig Qg Total Gate Charge (turn-on) — 21 32 IC = 10A 24 Qge Gate-to-Emitter Charge (turn-on) — 5.3 8.0 nC VGE = 15V CT 1 Qgc Gate-to-Collector Charge (turn-on) — 8.9 13 VCC = 400V Eon Turn-On Switching Loss — 29 40 IC = 10A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 200 281 μJRG = 22 Ω, L = 1.0mH, TJ = 25°C CT 4 Etotal Total Switching Loss — 229 313 E nergylos s es include tail &dioderevers e recovery td(on) Turn-On delay time — 27 37 IC = 10A, VCC = 400V, VGE = 15V tr Rise time — 15 23 ns RG = 22 Ω, L = 1.0mH, TJ = 25°C CT 4 td(off) Turn-Off delay time — 79 90 tf Fall time — 21 29 Eon Turn-On Switching Loss — 99 — IC = 10A, VCC = 400V, VGE = 15V 13,15 Eoff Turn-Off Switching Loss — 316 — μJRG=22 Ω, L=1.0mH, TJ = 175°C fà CT 4 Etotal Total Switching Loss — 415 — E nergylos s es include tail &dioderevers e recovery WF 1,WF 2 td(on) Turn-On delay time — 27 — IC = 10A, VCC = 400V, VGE = 15V 14,16 tr Rise time — 16 — ns RG = 22 Ω, L = 1.0mH, TJ = 175°C CT 4 td(off) Turn-Off delay time — 98 — WF 1,WF 2 tf Fall time — 33 — Cies Input Capacitance — 594 — pF VGE = 0V 22 Coes Output Capacitance — 49 — VCC = 30V Cres Reverse Transfer Capacitance — 17 — f = 1.0Mhz TJ = 175°C, IC = 40A 4 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT 2 Rg = 22 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V 22, CT 3 Rg = 22 Ω, VGE = +15V to 0V WF 4 Erec Reverse Recovery Energy of the Diode — 191 — μJTJ = 175°C 17,18,19 trr Diode Reverse Recovery Time — 62 — ns VCC = 400V, IF = 10A 20,21 Irr Peak Reverse Recovery Current — 16 — A VGE = 15V, Rg = 22 Ω, L=1.0mH WF 3 CT 6 9,10,11,12 Conditions |
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