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IRGS4064DPBF 数据表(PDF) 1 Page - International Rectifier |
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IRGS4064DPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 11 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGS4064DPbF 1 www.irf.com 02/16/12 VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C VCE(on) typ. = 1.6V PD - 96424 GC E Gate Collector Emitter E G n-channel C Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C • 5μs SCSOA • Square RBSOA • 100% of The Parts Tested for (ILM) • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Diode • Tighter Distribution of Parameters • Lead-Free Package Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI D2Pak C E C G Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC@ TC = 25°C Continuous Collector Current 20 IC@ TC = 100°C Continuous Collector Current 10 ICM Pulsed Collector Current 40 ILM Clamped Inductive Load Current c 40 A IF@TC=25°C Diode Continuous Forward Current 20 IF@TC=100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current d 40 Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC =25° Maximum Power Dissipation 101 W PD @ TC =100° Maximum Power Dissipation 50 TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT e ––– ––– 1.49 RθJC Junction-to-Case - Diode e ––– ––– 3.66 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount e ––– ––– 40 Wt Weight 1.5 g °C/W VGE -55 to + 175 300 (0.063 in. (1.6mm) from case) |
类似零件编号 - IRGS4064DPBF |
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类似说明 - IRGS4064DPBF |
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