TO293BN-RXYZ

1310 nm TO-Can Package for 10 Gb/s Applications

Data Sheet

Description

The TO293BN-RXYZ is a hermetically-sealed device with a

photo diode for optical output monitoring. It incorporates

1310 nm single mode edge-emitting laser diode chips for

use in uncooled applications up to 10.7 Gb/s. The laser

is mounted into a Transistor Outline (TO) header and is

hermetically sealed with a lens cap specific to it. The laser

design is buried hetero structure with multi-quantum

well (MQW) active layers and distributed-feedback (DFB)

grating layer. All laser chips come from wafers that have

been certified using a representative lot of devices that

must achieve an acceptable yield for burn-in and other

multi-temperature, CW and dynamic tests.

Features

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Low threshold current

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High bandwidth

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Qualified as per intent of Telcordia GR-468

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Operating temperature -40 °C to 85 °C

Applications

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Supports performance up to 10.7 Gb/s bit rate

•

LR1 SONET/SDH OC192/STM-64

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10 Gb/s Gigabit Ethernet

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10 Gb/s Fiber Channel