2

Electro-Optical Characteristics for TO293BN-RXYZ 1310 nm DFB TO-Can

Parameters tested at 25 °C, data for extended temperature range is based on product characterization results for

reference only.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Threshold Current

CW, T = 25 °C

812

mA

T = 85 °C

25

30

Slope Efficiency

η

CW, T = 25 °C

0.2

0.25

W/A

T = 85 °C

0.12

0.18

Optical Output Power

3.2

5.0

mW

Forward Voltage

1.3

1.6

V

1.9

3

Series Resistance

R

Without Matching R

5

Ω

With Matching R

12

30

Kink Current

70

mA

Wavelength

λ

1290

1310

1330

nm

Side Mode Suppression Ratio

SMSR

30

40

dB

Monitor Output Current

100

1000

μA

Monitor Dark Current

100

nA

Product Characteristics of Chip-on-Carrier or Package at 25 °C

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Wavelength/Temperature Coefficient

Dλ/dT

T = –5 °C to 85 °C

0.09

nm/°C

Relative Intensity Noise

RIN

–140

dB/Hz

Bandwidth

BW

9

GHz

Rise Time

Unfiltered 20 – 80%; ER = 5 dB

35

Ps

Fall Time

Unfiltered; 80 – 20%; ER = 5 dB

45

Ps

Monitor Capacitance

C

5

7

pF

Notes:

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute

stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those

given in the operations sections of the data sheet. Exposure to absolute maximum ratings for extended periods can

adversely affect device reliability.

Parameter

Unit

Min.

Max.

Forward Current

mA

150

Front Power

mW

20

Reverse Voltage (Laser Diode)

V

2

Reverse Voltage (Photo Diode)

V

20

Forward Current (Photo Diode)

mA

10

Operating Temperature

°C

–40

85

Storage Temperature

°C

–40

100

Storage Relative Humidity

%

85