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BF908-R 数据表(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

部件名 BF908-R
功能描述  Dual-gate MOS-FETs
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
网页  http://www.jmnic.com
标志 JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF908-R 数据表(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

  BF908-R_15 Datasheet HTML 1Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 2Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 3Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 4Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 5Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 6Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 7Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 8Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_15 Datasheet HTML 9Page - Quanzhou Jinmei Electronic Co.,Ltd.  
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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
12
V
ID
drain current
−
40
mA
±IG1
gate 1 current
−
10
mA
±IG2
gate 2 current
−
10
mA
Ptot
total power dissipation
see Fig.3; note 1
BF908
up to Tamb =50 °C
−
200
mW
BF908R
up to Tamb =40 °C
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Fig.3 Power derating curves.
handbook, halfpage
0
50
100
150
200
250
0
50
100
150
200
BF908
BF908R
P
tot
(mW)
Tamb ( C)
o
MRC275
Rev. 03 - 14 November 2007
3 of 9



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