BF908-R_15 datasheet(5/9 Pages) JMNIC

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NXP Semiconductors

Product speciﬁcation

Dual-gate MOS-FETs

BF908; BF908R

Fig.4 Transfer characteristics; typical values.

VDS = 8 V; Tj =25 °C.

handbook, halfpage

−0.6

−0.4

0.2

−0.2

0.4

VG1-S (V)

3 V

2 V

1.5 V

0.5 V

0 V

0.6

MRC281

VG2-S = 4 V

1 V

(mA)

Fig.5 Output characteristics; typical values.

VG2-S = 4 V; Tj =25 °C.

handbook, halfpage

048

MRC282

VDS (V)

(mA)

0.2 V

0.1 V

0 V

−0.3 V

−0.2 V

−0.1 V

VG1-S = 0.3 V

Fig.6

Forward transfer admittance as a function

of drain current; typical values.

VDS = 8 V; Tj =25 °C.

0.5 V

1 V

1.5 V

2 V

3 V

4 V

VG2-S = 0 V

Yfs

(mS)

ID (mA)

MRC280

Fig.7

Forward transfer admittance as a function

of junction temperature; typical values.

120

160

Yfs

(mS)

( C)

MRC276

VDS = 8 V; VG2-S = 4 V; ID =15mA.

Rev. 03 - 14 November 2007

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