数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

TLS710B0 数据表(PDF) 5 Page - Infineon Technologies AG

部件名 TLS710B0
功能描述  Low Dropout Linear Voltage Regulator
PDF  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLS710B0 数据表(HTML) 5 Page - Infineon Technologies AG

  TLS710B0 Datasheet HTML 1Page - Infineon Technologies AG TLS710B0 Datasheet HTML 2Page - Infineon Technologies AG TLS710B0 Datasheet HTML 3Page - Infineon Technologies AG TLS710B0 Datasheet HTML 4Page - Infineon Technologies AG TLS710B0 Datasheet HTML 5Page - Infineon Technologies AG TLS710B0 Datasheet HTML 6Page - Infineon Technologies AG TLS710B0 Datasheet HTML 7Page - Infineon Technologies AG TLS710B0 Datasheet HTML 8Page - Infineon Technologies AG TLS710B0 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 20 page
background image
Data Sheet
5
Rev. 1.0, 2015-03-12
TLS710B0
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Table 1
Absolute Maximum Ratings1)
T
j = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
1) Not subject to production test, specified by design.
Parameter
Symbol
Values
Unit
Note /
Test Condition
Number
Min.
Typ.
Max.
Input I, Enable EN
Voltage
V
I, VEN
-0.3
45
V
P_4.1.1
Output Q
Voltage
V
Q
-0.3
7
V
P_4.1.2
Temperature
Junction Temperature
T
j
-40
150
°C
P_4.1.3
Storage Temperature
T
stg
-55
150
°C
P_4.1.4
ESD Absorption
ESD Susceptibility to GND
V
ESD
-2
2
kV
HBM2)
2) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS001 (1.5 kΩ, 100 pF)
P_4.1.5
ESD Susceptibility to GND
V
ESD
-500
500
V
CDM3)
3) ESD susceptibility, Charged Device Model “CDM” according JEDEC JESD22-C101
P_4.1.6



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com