| 数据搜索系统,热门电子元器件搜索 |
|
HCS515-IP 数据表(PDF) 19 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
HCS515-IP 数据表(HTML) 19 Page - Microchip Technology |
|
19 / 28 page ![]() © 2002 Microchip Technology Inc. DS40183D-page 19 HCS515 8.0 ELECTRICAL CHARACTERISTICS FOR HCS515 Absolute Maximum Ratings† Ambient temperature under bias............................................................................................................ -40°C to +125°C Storage temperature .............................................................................................................................. -65 °C to +150°C Voltage on any pin with respect to VSS (except VDD)......................................................................... -0.6V to VDD +0.6V Voltage on VDD with respect to Vss ..................................................................................................................0 to +7.0V Total power dissipation (Note) ............................................................................................................................. 700 mW Maximum current out of VSS pin ...........................................................................................................................200 mA Maximum current into VDD pin .............................................................................................................................. 150 mA Input clamp current, IIK (VI < 0 or VI > VDD) ......................................................................................................... ± 20 mA Output clamp current, IOK (VO < 0 or VO >VDD) .................................................................................................. ± 20 mA Maximum output current sunk by any I/O pin..........................................................................................................25 mA Maximum output current sourced by any I/O pin .................................................................................................... 25 mA Note: Power dissipation is calculated as follows: PDIS = VDD x {IDD - ∑ IOH} + ∑ {(VDD–VOH) x IOH} + ∑(VOL x IOL) † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other condi- tions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |