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UT2321G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2321G-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2321G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

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UT2321
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-249.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 2)
ID
-3.8
A
Pulsed Drain Current (Note 2)
IDM
-15.2
A
Power Dissipation (Note 3)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1 in 2 copper pad of FR4 board.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-16V, VGS=0V
-1
µA
Forward
VGS=12V, VDS=0V
100
nA
Gate-Source Leakage Current
Reverse
IGSS
VGS=-12V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.4
-1.0
V
VGS=-4.5V, ID=-2.4A
45
55
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS=-2.5V, ID=-2.0A
65
80
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1500
pF
Output Capacitance
COSS
270
pF
Reverse Transfer Capacitance
CRSS
VDS=-10 V, VGS =0V, f=1.0MHz
185
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
14.8
19
nC
Gate-Source Charge
QGS
2.8
nC
Gate-Drain Charge
QGD
VDS=-10V, VGS=-4.5V, ID=-2.4A
4.4
nC
Turn-ON Delay Time
tD(ON)
13
24
ns
Turn-ON Rise Time
tR
8
24
ns
Turn-OFF Delay Time
tD(OFF)
65
256
ns
Turn-OFF Fall-Time
tF
VDD=-10V, ID=-1A, VGS=-4.5V,
RGEN=6 Ω
29
72
ns
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(Note)
VSD
VGS=0V, IS =-0.42A
-1.2
V
Maximum Body-Diode Continuous
Current
IS
-0.42
A
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.



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