UT2321G-AE3-R datasheet(1/4 Pages) UTC

部件名	UT2321G-AE3-R

功能描述	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

标志

1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT2321

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-249.F

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UT2321 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.



FEATURES

* RDS(ON) < 55mΩ @ VGS=-4.5V, ID=-2.4A

* RDS(ON) < 80mΩ @ VGS=-2.5V, ID=-2.0A

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified



SYMBOL

2.Gate

1.Source

3.Drain



ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

1

2

3

Packing

UT2321G-AE3-R

SOT-23

S

G

D

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source



MARKING

类似零件编号 - UT2321G-AE3-R

制造商	部件名	数据表	功能描述
Unisonic Technologies	UT2321G-AE3-R	230Kb / 4P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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