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BSS138G-AE2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BSS138G-AE2-R
功能描述  N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BSS138G-AE2-R 数据表(HTML) 2 Page - Unisonic Technologies

  BSS138G-AE2-R Datasheet HTML 1Page - Unisonic Technologies BSS138G-AE2-R Datasheet HTML 2Page - Unisonic Technologies BSS138G-AE2-R Datasheet HTML 3Page - Unisonic Technologies BSS138G-AE2-R Datasheet HTML 4Page - Unisonic Technologies  
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BSS138
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-271.F
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
DC
0.22
Continuous Drain Current
Pulse
ID
0.88
A
SOT-23-3
0.36
Power Dissipation
SOT-323
PD
0.15
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-23-3
350
Junction to Ambient
SOT-323
θJA
833
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
50
V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
72
mV/°C
VDS=50V, VGS=0V
0.5
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
0.1
µA
Gate–Body Leakage, Forward
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
(Note)
Gate-Threshold Voltage
VGS(TH)
VDS=VGS, ID=1m A
0.8
1.3
1.5
V
Gate Threshold Voltage Temperature
Coefficient
∆VGS(TH)/∆TJ ID=1mA, Referenced to 25°C
-2
mV/°C
VGS=10 V, ID=0.22A
0.7
3.5
Static Drain–Source On–Resistance
RDS(ON)
VGS=4.5 V, ID=0.22A
1.0
6.0
Ω
On-State Drain Current
ID(ON)
VGS=10 V, VDS=5V
0.2
A
Forward Transconductance
gFS
VDS=10V, ID=0.22A
0.12 0.5
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
27
pF
Output Capacitance
COSS
13
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1MHz
6
pF
SWITCHING PARAMETERS
(Note)
Total Gate Charge
QG
1.7
2.4
nC
Gate Source Charge
QGS
0.1
nC
Gate Drain Charge
QGD
VDS=25V, VGS=10V, ID=0.22A
0.4
nC
Turn-ON Delay Time
tD(ON)
2.5
5
ns
Turn-ON Rise Time
tR
9
18
ns
Turn-OFF Delay Time
tD(OFF)
20
36
ns
Turn-OFF Fall-Time
tF
VDD=30V, ID=0.29A,VGS=10V,
RG=6Ω,
7
14
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS= 0V, IS=0.44A (Note)
0.8
1.4
V
Max. Diode Forward Current
IS
0.22
A
Note: Pulse test, pulse width ≤ 300us, duty cycle≤ 2%



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