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BSS138G-AE2-R 数据表(PDF) 3 Page - Unisonic Technologies |
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BSS138G-AE2-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() BSS138 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 3 www.unisonic.com.tw QW-R502-271.F TYPICAL CHARACTERISTICS Drain-Source On-State Resistance Characteristics Gate to Source Voltage, VGS (V) Drain Current vs. Drain-Source Breakdown Voltage Drain Source Breakdown Voltage, BVDSS (V) 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) 0 0.5 1.0 1.5 2.0 0 0.2 0.4 0.6 0.8 1.0 VGS=10V ID=2.22A VGS=4.5V ID=2.22A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) 0 50 100 150 200 0 204060 80 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 01 23 4 Drain to Source Voltage, VDS (V) VG=2V VG=4V VG=6V VG=8V VG=10V On-State Characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 25°С 125°С Gate to Source Voltage, VGS (V) Transfer Characteristics |
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