UT20N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-139.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

20

A

Pulsed Drain Current (Note 1)

120

Avalanche Energy

Single Pulsed (Note 2)

15

mJ

Repetitive (Note 1)

6

Peak Diode Recovery (Note 3)

dv/dt

6

KV/μs

Power Dissipation

TO-252

60

W

DFN-8(5×6)

21

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction to Ambient

TO-252

100

°C/W

DFN-8(5×6)

46

Junction to Case

TO-252

1.7

2.5

°C/W

DFN-8(5×6)

6