UT20N03G-TN3-R datasheet(4/6 Pages) UTC

4 / 6 page

UT20N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-139.D



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250µA

Drain-Source Leakage Current

IDSS

VDS =30V,VGS =0V

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(TH)

VDS =VGS, ID =25 µA

1.2

1.6

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID =15A

22.9

mΩ

VGS=10V, ID =15A

15.5

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =25 V, VGS =0V, f=1MHz

530

700

Output Capacitance

COSS

200

275

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VGS=10V,VDD=15V, RG=12.7Ω,

ID=15A

6.2

9.3

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall-Time

Gate-Source Charge

QGS

VDD=15V,ID=15A

2.5

3.1

Gate-Drain Charge

QGD

6.4

9.6

Gate Charge Total

VDD=15V,ID=15A, VGS=0~5V

8.4

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V,IF=30A

1.1

1.4

Maximum Continuous Drain-Source

Diode Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

120

Reverse Recovery Time

tRR

VR=15V,IF=IS, dIF/dt=100A/μs

Reverse Recovery Charge

QRR

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. ID = 15A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. IS=30A, VDS=24V, di/dt=200A/μs, TJ(MAX)=175°C

4. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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