UT4435

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-254.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

V

Continuous Drain Current (Note 2)

-8.8

A

Pulsed Drain Current (Note 2)

-50

A

Power Dissipation

1

W

Junction Temperature

175

°С

Storage Temperature

-55 ~ +175

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient

125

°С/W

Junction-to-Case

25

°С/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

µA

Gate-Source Leakage Current

±100

nA

ON CHARACTERISTICS

(Note)

Gate-Threshold Voltage

-1

-1.7

-3

V

On State Drain Current

-50

A

15

20

Static Drain–Source On–Resistance

22

35

mΩ

Forward Transconductance

24

S

DYNAMIC PARAMETERS

Input Capacitance

1604

pF

Output Capacitance

408

pF

Reverse Transfer Capacitance

202

pF

SWITCHING PARAMETERS

(Note)

Total Gate Charge

17

24

nC

Gate-Source Charge

5

nC

Gate-Drain Charge

6

nC

Turn-ON Delay Time

13

23

ns

Turn-ON Rise Time

13.5

24

ns

Turn-OFF Delay Time

42

68

ns

Turn-OFF Fall-Time

25

40

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Diode Forward Voltage(Note)

-0.73

-1.2

V

Maximum Body-Diode Continuous

Current

-2.1

A

Note: Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%