| 数据搜索系统,热门电子元器件搜索 |
|
UT4435G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT4435G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies |
|
3 / 4 page ![]() UT4435 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R502-254.D TYPICAL CHARACTERISTICS Drain Current vs. Source to Drain Voltage Source to Drain Voltage, VSD (V) Switching Time Waveforms VDS 90% 10% tD(ON) tD(OFF) tF 10% 10% 90% 90% 0 0 VGS tR -0.2 0 0 -0.5 -0.8 -0.4 -0.6 -2.0 -1.0 -2.5 -3.0 -1.0 -1.5 0 -50 Drain Current vs. Gate Threshold Voltage Gate Threshold Voltage, VTH (V) -250 -100 -150 -200 -300 Drain Current vs. Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage, BVDSS(V) 0 0 -50 -30 -250 -10 -100 -150 -200 -300 -20 -50 -40 -350 -400 -450 -0.2 0 -0.4 -0.8 -0.6 Drain-Source On-State Resistance Characteristics Drain to Source Voltage, VDS (mV) -300 -12 0 0 -4 -8 -10 -2 -200 -100 -6 -400 VGS=-10V, ID=-8.8A VGS=-4.5V, ID=-6.7A -40 -30 -3 0 -1 Drain-to-Source Voltage, VDS (V) On-State Characteristics -10 -20 -50 -2 -4 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |