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LP2957ISX/NOPB 数据表(PDF) 1 Page - Texas Instruments

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部件名 LP2957ISX/NOPB
功能描述  5V Low-Dropout Regulator for 關P Applications
PDF  24 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

LP2957ISX/NOPB 数据表(HTML) 1 Page - Texas Instruments

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LP2957, LP2957A
www.ti.com
SNVS102C – JUNE 1998 – REVISED APRIL 2013
LP2957/LP2957A 5V Low-Dropout Regulator for µP Applications
Check for Samples: LP2957, LP2957A
1
FEATURES
DESCRIPTION
The LP2957 is a 5V micropower voltage regulator
2
5V Output within 1.4% Over Temperature (A
with
electronic
shutdown,
error
flag,
very
low
Grade)
quiescent current (150 µA typical at 1 mA load), and
Easily Programmed for Snap-On/Snap-Off
very low dropout voltage (470 mV typical at 250 mA
Output
load current).
Ensured 250 mA Output Current
Output can be wired for snap-on/snap-off operation to
Extremely Low Quiescent Current
eliminate transition voltage states where µP operation
may be unpredictable.
Low Input-Output Voltage Required for
Regulation
Output crowbar (50 mA typical pull-down current) will
Reverse Battery Protection
bring down the output quickly when the regulator
snaps off or when the shutdown function is activated.
Extremely Tight Line and Load Regulation
The part has tight line and load regulation (0.04%
Very Low Temperature Coefficient
typical) and low output temperature coefficient (20
Current and Thermal Limiting
ppm/°C typical).
Error Flag Signals when Output is out of
The accuracy of the 5V output is ensured at room
Regulation
temperature and over the full operating temperature
range.
APPLICATIONS
The LP2957 is available in the five-lead TO-220 and
High-Efficiency Linear Regulator
DDPAK/TO-263 packages.
Battery-Powered Regulator
Package Outline
Top View
Top View
Figure 1. Bent, Staggered Leads
Figure 2. Plastic Surface Mount Package
5-Lead TO-220 Package
5-Lead DDPAK/TO-263 Package
See Package Number NDH0005D
See Package Number KTT0005B
Side View
Figure 3. See Package Number KTT0005B
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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