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25N10G-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies |
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25N10G-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() 25N10 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-448.C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage VDSS 100 V Gate Source Voltage VGSS ±20 V Continuous Drain Current (VGS=10V) TC =25°C ID 23 A TC = 100°C ID 14.6 A Pulsed Drain Current (Note 2) IDM 80 A Total Power Dissipation (TC =25°C) TO-220F/TO-220F1 PD 50 W TO-220F2 52 TO-251/TO-252 41 Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note:1. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Pulse width limited by max. junction temperature THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F/TO-220F1 TO-220F2 θJA 62.5 °C/W TO-251/TO-252 100 Junction to Case TO-220F/TO-220F1 θJC 2.5 °C/W TO-220F2 2.4 TO-251/TO-252 3 |
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