25N10G-TN3-R datasheet(4/5 Pages) UTC

4 / 5 page

25N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 5

www.unisonic.com.tw

QW-R502-448.C



ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID =1mA

100

Breakdown Voltage Temperature

Coefficient

∆BVDSS/∆TJ Reference to 25°C , ID =1mA

0.14

V/°C

Drain-Source Leakage Current

IDSS

VDS =100V, VGS =0V, TJ=25°C

µA

VDS =80V, VGS =0V,TJ =150°C

100

µA

Gate-Source Leakage Current

IGSS

VGS =±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250µA

Static Drain-Source On-Resistance (Note)

RDS(ON)

VGS =10V, ID =16A

mΩ

Forward Transconductance

gFS

VDS =10V, ID =16A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =25V, VGS=0V, f=1.0MHz

1060 1700

Output Capacitance

COSS

270

Reverse Transfer Capacitance

CRSS

Gate Resistance

f=1.0MHz

1.5

2.3

Ω

SWITCHING PARAMETERS

Total Gate Charge (Note)

VGS=10V, VDS=80V, ID=16A

Gate Source Charge

QGS

Gate Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=50V, ID=16A, RG=3.3Ω,

VGS=10V, RD=3.125Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note)

VSD

IS =16A, VGS =0V

1.3

Reverse Recovery Time

tRR

IS =16A,VGS =0V,

dI/dt=100A/µs

Reverse Recovery Charge

QRR

380

Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

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