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TC647 数据表(PDF) 13 Page - Microchip Technology |
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TC647 数据表(HTML) 13 Page - Microchip Technology |
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13 / 28 page ![]() 2002 Microchip Technology Inc. DS21447C-page 13 TC647 FIGURE 5-6: Circuit For Determining RBASE. The correct value for this resistor can be determined as follows: VOH = VRSENSE + VBE(SAT) + VRBASE VRSENSE = IFAN x RSENSE VRBASE = RBASE x IBASE IBASE = IFAN / hFE VOH is specified as 80% of VDD in Section 1.0, “Electrical Characteristics”; VBE(SAT) is given in the cho- sen transistor data sheet. It is now possible to solve for RBASE. EQUATION Some applications require the fan to be powered from the negative 12V supply to keep motor noise out of the positive voltage power supplies. As shown in Figure 5-8, zener diode D1 offsets the -12V power supply voltage, holding transistor Q1 off when VOUT is low. When VOUT is high, the voltage at the anode of D1 increases by VOUT causing Q1 to turn on. Operation is otherwise the same as the case of fan operation from +12V. TABLE 5-2: TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V) Q1 GND VDD RSENSE RBASE VOH = 80% VDD + V RBASE – + V BE(SAT) – + VR SENSE – Fan RBASE = VOH - VBE(SAT) - VRSENSE IBASE Device Package Max. VBE(sat)/VGS (V) Min. HFE VCEO/VDS (V) Fan Current (mA) Suggested RBASE (Ω) MMBT2222A SOT-23 1.2 50 40 150 800 MPS2222A TO-92 1.2 50 40 150 800 MPS6602 TO-92 1.2 50 40 500 301 SI2302 SOT-23 2.5 NA 20 500 Note 1 MGSF1N02E SOT-23 2.5 NA 20 500 Note 1 SI4410 SO-8 4.5 NA 30 1000 Note 1 SI2308 SOT-23 4.5 NA 60 500 Note 1 Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times. |
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