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TC649 数据表(PDF) 13 Page - Microchip Technology |
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TC649 数据表(HTML) 13 Page - Microchip Technology |
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13 / 28 page ![]() 2002 Microchip Technology Inc. DS21449C-page 13 TC649 Table 5-2 gives examples of some commonly available transistors and MOSFETs. This table should be used as a guide only since there are many transistors and MOSFETs which will work just as well as those listed. The critical issues when choosing a device to use as Q1 are: (1) the breakdown voltage (V(BR)CEO or VDS (MOSFET)) must be large enough to withstand the highest voltage applied to the fan (Note: This will occur when the fan is off); (2) 5 mA of base drive current must be enough to saturate the transistor when conducting the full fan current (transistor must have sufficient gain); (3) the VOUT voltage must be high enough to suf- ficiently drive the gate of the MOSFET to minimize the RDS(on) of the device; (4) rated fan current draw must be within the transistor's/MOSFET's current handling capability; and (5) power dissipation must be kept within the limits of the chosen device. FIGURE 5-6: Output Drive Transistor Circuit Topologies. TABLE 5-2: TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V) Device Package Max. VBE(sat)/VGS (V) Min. HFE VCEO/VDS (V) Fan Current (mA) Suggested RBASE (Ω) MMBT2222A SOT-23 1.2 50 40 150 800 MPS2222A TO-92 1.2 50 40 150 800 MPS6602 TO-92 1.2 50 40 500 301 SI2302 SOT-23 2.5 NA 20 500 Note 1 MGSF1N02E SOT-23 2.5 NA 20 500 Note 1 SI4410 SO-8 4.5 NA 30 1000 Note 1 SI2308 SOT-23 4.5 NA 60 500 Note 1 Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times. Q1 Q1 Q2 GND VDD RSENSE RBASE VOUT VOUT Fan a) Single Bipolar Transistor Q1 GND VDD RSENSE VOUT C) N-Channel MOSFET GND VDD RSENSE RBASE Fan b) Darlington Transistor Pair Fan |
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