UT5003G-S08-R datasheet(3/7 Pages) UTC

3 / 7 page

UT5003

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R502-167.B



ELECTRICAL CHARACTERISTICS (Cont.)

P-CHANNEL

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-30

Drain-Source Leakage Current

IDSS

VDS=-24V, VGS=0V

-1

Gate-Source Leakage Current

IGSS

VDS=0V, VGS=±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250uA

-1

-1.5

-2.5

Drain-Source On-State Resistance (Note2)

RDS(ON)

VGS=-10V, ID=-5A

37.5

mΩ

VGS=-4.5V, ID=-4A

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=-15V, f=1MHz

780

Output Capacitance

COSS

145

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-ON Delay Time (Note2)

tD(ON)

VDS=-10V, VGS=-10V,

ID≒1A, RG=3Ω

7.7

11.5

Turn-ON Rise Time

5.7

8.5

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

9.5

Total Gate Charge (Note2)

VDS=0.5*BVDSS, VGS=-10V,

ID=-5A

15.1

Gate-Source Charge

QGS

2.1

Gate-Drain Charge

QGD

4.0

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note2)

VSD

IS=-1A, VGS=0V

-1

Diode Continuous Forward Current

-1.3

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤ 2%.

3. Surface Mounted on 1in

2 pad area, t ≤ 10sec.

UT5003G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

UT5003G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7

数据表下载