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UT5003G-S08-R 数据表(PDF) 1 Page - Unisonic Technologies |
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UT5003G-S08-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD UT5003 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-167.B DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications. FEATURES * N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A * Super high dense cell design * Reliable and rugged SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 12 3 456 7 8 UT5003G-S08-R SOP-8 S1 G1 S2 G2 D2 D2 D1 D1 Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
类似零件编号 - UT5003G-S08-R |
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类似说明 - UT5003G-S08-R |
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