UTT30N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-661.F



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

30

A

Pulsed

120

A

Single Pulsed Avalanche Energy (Note 2)

55

mJ

Power Dissipation

TO-220/TO-263

79

W

TO-220F

47

TO-252

44

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

3. Pulse Width = 100s



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220/TO-220F

TO-263

62

°C/W

TO-252

110

Junction to Case

TO-220/TO-263

1.58

°C/W

TO-220F

2.64

TO-252

2.85