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UTT30N10L-TN3-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 UTT30N10L-TN3-R
功能描述  N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT30N10L-TN3-R 数据表(HTML) 3 Page - Unisonic Technologies

  UTT30N10L-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 3Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 4Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 5Page - Unisonic Technologies UTT30N10L-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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UTT30N10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-661.F
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
1
µA
Gate- Source Leakage
Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
39.5
52
mΩ
VGS=6V, ID=15A
39.2
72
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
2590
pF
Output Capacitance
COSS
144
pF
Reverse Transfer Capacitance
CRSS
105
pF
SWITCHING PARAMETERS
Turn-ON Time
tON
VDD=30V, ID=0.5A, VGS=10V,
RGS=25Ω
48
ns
Turn-ON Delay Time
tD(ON)
68
ns
Rise Time
tR
780
ns
Turn-OFF Delay Time
tD(OFF)
126
ns
Total Gate Charge at 10V
QG
VGS=10V, VDS=25V, ID=1.3A,
IG=100µA
75
nC
Gate to Source Charge
QGS
9
nC
Gate to Drain Charge
QGD
16
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
30
A
Maximum Body-Diode Pulsed Current
ISM
120
A
Drain-Source Diode Forward Voltage
VSD
ISD=30A
1.25
V
ISD=15A
1.0
V



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