10N60K-MT

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 7

www.unisonic.com.tw

QW-R205-022.h

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PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

V

Avalanche Current (Note 2)

10

A

Continuous

10

A

Drain Current

Pulsed (Note 2)

38

A

Single Pulsed (Note 3)

200

mJ

Avalanche Energy

Repetitive (Note 2)

12

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-263

156

W

Power Dissipation

TO-220F/TO-220F1

TO-220F2/TO-220F3

52

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature



THERMAL DATA

PARAMETER

SYMBOL

RATING

UNIT

Junction to Ambient

62.5

°C/W

TO-220/TO-263

0.8

°C/W

Junction to Case

TO-220F/TO-220F1

TO-220F2/TO-220F3

2.4

°C/W