10N60KL-TQ2-R datasheet(4/7 Pages) UTC

4 / 7 page

10N60K-MT

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-022.h



ELECTRICAL CHARACTERISTICS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID= 250μA

600

Drain-Source Leakage Current

IDSS

VDS=600V, VGS=0V

µA

Forward

VGS=30V, VDS=0V

100

Gate-Source Leakage Current

Reverse

IGSS

VGS=-30V, VDS=0V

-100

Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250 µA, Referenced to 25°C

0.7

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=5A

0.63 0.75

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

1570 2040 pF

Output Capacitance

COSS

166 215

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0 MHz

SWITCHING CHARACTERISTICS

Total Gate Charge

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

VDS=50V, ID=1.3A, VGS=10V

IG=100μA (Note1, 2)

8.5

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

205

Turn-Off Fall Time

VDD=30V, ID=0.5A, RG=25Ω,

VGS=0V (Note1, 2)

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=10A

1.4

Maximum Continuous Drain-Source Diode

Forward Current

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

420

Reverse Recovery Charge

QRR

VGS=0V, IS=10A,

dIF/dt=100A/µs (Note1)

4.2

µC

Notes: 1. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

2. Essentially independent of operating temperature

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