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ML4826IP-2 数据表(PDF) 12 Page - Micro Linear Corporation |
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ML4826IP-2 数据表(HTML) 12 Page - Micro Linear Corporation |
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12 / 16 page ![]() ML4826 12 current source. The circuit guarantees that the maximum operating current is available at all times and minimizes the worst case power dissipation in the IC. Other methods such as a simple series resistor are possible, but can very easily lead to excessive ICC current in the ML4826. Figures 6 and 7 show other possible methods for feeding VCC. LEADING/TRAILING MODULATION Conventional Pulse Width Modulation (PWM) techniques employ trailing edge modulation in which the switch will turn on right after the trailing edge of the system clock. The error amplifier output voltage is then compared with the modulating ramp. When the modulating ramp reaches the level of the error amplifier output voltage, the switch will be turned OFF. When the switch is ON, the inductor current will ramp up. The effective duty cycle of the trailing edge modulation is determined during the ON time of the switch. Figure 4 shows a typical trailing edge control scheme. In the case of leading edge modulation, the switch is turned OFF right at the leading edge of the system clock. When the modulating ramp reaches the level of the error amplifier output voltage, the switch will be turned ON. The effective duty-cycle of the leading edge modulation is determined during the OFF time of the switch. Figure 5 shows a leading edge control scheme. One of the advantages of this control technique is that it requires only one system clock. Switch 1 (SW1) turns off and switch 2 (SW2) turns on at the same instant to minimize the momentary “no-load” period, thus lowering ripple voltage generated by the switching action. With such synchronized switching, the ripple voltage of the first stage is reduced. Calculation and evaluation have shown that the 120Hz component of the PFC’s output ripple voltage can be reduced by as much as 30% using this method. FUNCTIONAL DESCRIPTION (Continued) ML4826 VCC RTN RECTIFIED VAC 20V 1 µF 1500 µF 39k Ω 18 Ω GATE DRIVE 22k Ω T1 Q2 MJE200 Q1 2N2222 ML4826 VCC RTN VBIAS 1 µF ML4826 VCC RTN VBIAS Figure 5. VCC Bias Circuitry Figure 6. Figure 7. |
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