NVMFS4841N datasheet(2/6 Pages) ONSEMI

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NVMFS4841N

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 30 V

TJ = 25 °C

TJ = 125°C

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

±100

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.5

2.5

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

5.6

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 30 A

4.7

7.0

VGS = 4.5 V

ID = 30 A

9.2

11.4

Forward Transconductance

gFS

VDS = 15 V, ID = 15 A

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 12 V

1436

Output Capacitance

COSS

348

Reverse Transfer Capacitance

CRSS

177

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

11.5

Threshold Gate Charge

QG(TH)

2.0

Gate−to−Source Charge

QGS

5.0

Gate−to−Drain Charge

QGD

5.1

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V,

ID = 30 A

25.4

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

13.5

Rise Time

66.5

Turn−Off Delay Time

td(OFF)

15.5

Fall Time

7.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.9

1.2

TJ = 125°C

0.8

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

20.5

Charge Time

11.6

Discharge Time

8.9

Reverse Recovery Charge

QRR

10.7

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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