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NVMFS4841N 数据表(PDF) 4 Page - ON Semiconductor

部件名 NVMFS4841N
功能描述  Power MOSFET
PDF  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVMFS4841N 数据表(HTML) 4 Page - ON Semiconductor

  NVMFS4841N Datasheet HTML 1Page - ON Semiconductor NVMFS4841N Datasheet HTML 2Page - ON Semiconductor NVMFS4841N Datasheet HTML 3Page - ON Semiconductor NVMFS4841N Datasheet HTML 4Page - ON Semiconductor NVMFS4841N Datasheet HTML 5Page - ON Semiconductor NVMFS4841N Datasheet HTML 6Page - ON Semiconductor  
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NVMFS4841N
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4
TYPICAL PERFORMANCE CURVES
Crss
10
0
10
15
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
2000
0
VGS
VDS
55
TJ = 25°C
Ciss
Coss
Crss
Ciss
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
0
2
0
QG, TOTAL GATE CHARGE (nC)
1
4
8
VDD = 15 V
VGS = 10 V
ID = 30 A
TJ = 25°C
QT
10
0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
RG, GATE RESISTANCE (W)
1
10
100
1000
1
VGS = 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
5
10
15
tr
td(off)
td(on)
tf
10
VDD = 15 V
ID = 15 A
VGS = 10 V
0.8
0.9
20
30
25
TJ = 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
TJ, STARTING JUNCTION TEMPERATURE (°C)
ID = 19 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
20
60
80
100
125
100
180
175
1000
40
25
2200
1800
1600
1400
1200
200
800
600
400
0.5
1.0
120
3
4
26
16
14
26
12
QGS
140
160
12
QGD
18 20 22
11
10
9
8
7
6
5
24
150



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