ACE4435B datasheet(2/6 Pages) ACE

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ACE4435B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1.2

-1.4

-2.7

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-5.7A

VGS=-4.5V, ID=-4.4A

Forward Transconductance

gFS

VGS=-5V, ID=-5.7A

Diode Forward Voltage

VSD

ISD=-2.3A, VGS=0V

-0.82

-1.2

Maximum Body-Diode Continuous

Current

-2.3

Switching

Total Gate Charge

VGS=-10V VDS=-15V,

ID=-6A

18.3

23.79

Gate-Source Charge

Qgs

2.4

3.12

Gate-Drain Charge

Qgd

3.1

4.03

Turn-On Delay Time

Td(on)

VGS=-10V,VDS=-15V,

RL=15

Ω, R

GEN=6

12.4

24.8

Turn-Off Delay Time

td(off)

41.1

82.2

Dynamic

Input Capacitance

Ciss

VGS=0V , VDS=-15V

f=1MHz

971.5

Output Capacitance

Coss

235.1

Reverse Transfer Capacitance

Crss

82.7

Note: 1.

The value of R θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

2. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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