ACE4435B datasheet(1/6 Pages) ACE

部件名	ACE4435B

功能描述	P-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

标志

1 / 6 page

ACE4435B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE4435B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge. This device is suitable for use as a load switch or in PWM applications.

Features

• V

DS(V)=-30V

• I

D=-6.5A (VGS=-10V)

• R

DS(ON)＜40m

Ω (V

GS=-10V)

• R

DS(ON)＜50m

Ω (V

GS=-4.5V)

•

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current (Continuous) * AC

TA=25

OC

ID

-6.5

A

TA=70

OC

-5.3

Drain Current (Pulse) * B

IDM

-30

A

Power Dissipation

TA=25

OC

PD

3

W

TA=70

OC

2.1

Operating and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Packaging Type

SOP-8

Ordering information

ACE4435B FM + H

FM : SOP-8

Pb - free

Halogen - free

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制造商	部件名	数据表	功能描述
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