ACE6344B datasheet(2/11 Pages) ACE

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ACE6344B

N&P-Channel Enhancement Mode MOSFET

VER 1.1

Ordering information

ACE6344B XX +

Electrical Characteristics (N-Channel)(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=250uA

0.5

0.75

1.2

Gate Leakage Current

IGSS

VGS=±12V ,VDS=0V

±100

Drain-Source On Resistance

RDS(ON)

VGS=4.5V, ID=3A

VGS=2.5V, ID=2.8A

Forward Transconductance

gFS

VDS=5V, ID=-3A

Diode Forward Voltage

VSD

ISD=-1.7A, VGS=0V

0.74

1.2

Maximum Body-Diode

Continuous Current

2.5

Switching

Total Gate Charge

VGS=4.5V,VDS=-10V,

ID=3A

2.9

Gate-Source Charge

Qgs

0.4

Gate-Drain Charge

Qgd

0.6

Turn-On Delay Time

td(on)

VDS=10V, ID=3A,

VGS=4.5V,RG=3Ω

2.5

Turn-On Rise Time

3.2

Turn-Off Delay Time

td(off)

Turn- Off Rise Time

Dynamic

Input Capacitance

Ciss

VDS=10V,VGS=0V,

F=1.0MHZ

260

Output Capacitance

Coss

Reverse Transfer capacitance

Crss

Note:

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

GM : SOT-23-6L

Pb - free

Halogen - free

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