ACE6344B datasheet(6/11 Pages) ACE

6 / 11 page

ACE6344B

N&P-Channel Enhancement Mode MOSFET

VER 1.1

Electrical Characteristics (P-Channel)(TA=25℃ Unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250uA

-0.4

-0.7

-1

Gate Leakage Current

IGSS

VGS=±12V ,VDS=0V

±100

Drain-Source On Resistance

RDS(ON)

VGS=-4.5V, ID=-2.5A

110

VGS=-2.5V, ID=-2A

110

140

Forward Transconductance

gFS

VDS=-5V, ID=-2.5A

9.5

Diode Forward Voltage

VSD

ISD=-3A, VGS=0V

-1.2

Maximum Body-Diode

Continuous Current

-2.5

Switching

Total Gate Charge

VGS=-4.5V,VDS=-10V,

ID=-2A

3.2

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

0.9

Turn-On Delay Time

td(on)

VDD=-10V, RL=5Ω,

ID=-2A, VGEN=-4.5V,

RG=3Ω

Turn-On Rise Time

5.5

Turn-Off Delay Time

td(off)

Turn- Off Rise Time

Dynamic

Input Capacitance

Ciss

VGS=-10V,VGS=0V,

F=1.0MHZ

325

Output Capacitance

Coss

Reverse Transfer capacitance

Crss

Note:

A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

ACE6344B 数据表(PDF) 6 Page - ACE Technology Co., LTD.

ACE6344B 数据表(HTML) 6 Page - ACE Technology Co., LTD.

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载