NCE65R360D datasheet(1/10 Pages) NCEPOWER

部件名	NCE65R360D

功能描述	N-Channel Super Junction Power MOSFET ll

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制造商	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

网页	http://www.ncepower.com

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Wuxi NCE Power Semiconductor Co., Ltd

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1

NCE65R360D,NCE65R360,NCE65R360F

N-Channel Super Junction Power MOSFET Ⅱ

VDS

650

V

RDS(ON)MAX

360

mΩ

ID

11

A

General Description

The

series of devices use advanced super junction

technology and design to provide excellent RDS(ON) with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

Features

●

New technology for high voltage device

●

Low on-resistance and low conduction losses

●

small package

●

Ultra Low Gate Charge cause lower driving requirements

●

100% Avalanche Tested

●

ROHS compliant

Application

●

Power factor correction（PFC）

●

Switched mode power supplies(SMPS)

●

Uninterruptible Power Supply（UPS）

Package Marking And Ordering Information

Device

Device Package

Marking

NCE65R360D

TO-263

NCE65R360D

NCE65R360

TO-220

NCE65R360

NCE65R360F

TO-220F

NCE65R360F

Table 1.

Absolute Maximum Ratings (TC=25℃)

Parameter

Symbol

NCE65R360D

NCE65R360

NCE65R360F

Unit

Drain-Source Voltage (

VGS=0V）

VDS

650

V

Gate-Source Voltage (

VDS=0V)

VGS

±

30

V

Continuous Drain Current at Tc=25°C

ID (DC)

11

11*

A

Continuous Drain Current at Tc=100°C

ID (DC)

7

7*

A

Pulsed drain current

(Note 1)

IDM (pluse)

33

33*

A

Maximum Power Dissipation(Tc=25℃)

Derate above 25

°C

PD

121

0.97

32.7

0.26

W

W/

°C

Single pulse avalanche energy

(Note2)

EAS

280

mJ

Avalanche current

(Note 1)

IAR

5.5

A

Repetitive Avalanche energy ，tAR limited by Tjmax

(Note 1)

EAR

0.5

mJ

Schematic diagram

TO-263

TO-220

TO-220F

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