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NCE65R360D 数据表(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

部件名 NCE65R360D
功能描述  N-Channel Super Junction Power MOSFET ll
PDF  10 Pages
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制造商  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
网页  http://www.ncepower.com
标志 NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE65R360D 数据表(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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NCE65R360D,NCE65R360,NCE65R360F
Parameter
Symbol
NCE65R360D
NCE65R360
NCE65R360F
Unit
Drain Source voltage slope, VDS ≤480 V,
dv/dt
50
V/ns
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
dv/dt
15
V/ns
Operating Junction and Storage Temperature Range
TJ,TSTG
-55...+150
°C
* limited by maximum junction temperature
Table 2.
Thermal Characteristic
Parameter
Symbol
NCE65R360D
NCE65R360
NCE65R360F
Unit
Thermal Resistance，Junction-to-Case（Maximum）
RthJC
1.03
3.82
°C /W
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJA
62
80
°C /W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
650
V
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=650V,VGS=0V
0.05
1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=650V,VGS=0V
100
μA
Gate-Body Leakage Current
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2.5
3
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7A
300
360
mΩ
Dynamic Characteristics
Forward Transconductance
gFS
VDS = 20V, ID = 7A
8
S
Input Capacitance
Clss
1030
pF
Output Capacitance
Coss
87
pF
Reverse Transfer Capacitance
Crss
VDS=50V,VGS=0V,
F=1.0MHz
4.5
pF
Total Gate Charge
Qg
23
40
nC
Gate-Source Charge
Qgs
5.7
nC
Gate-Drain Charge
Qgd
VDS=480V,ID=11A,
VGS=10V
8
nC
Intrinsic gate resistance
RG
f = 1 MHz open drain
2
Ω
Switching times
Turn-on Delay Time
td(on)
9
nS
Turn-on Rise Time
tr
4
nS
Turn-Off Delay Time
td(off)
40
65
nS
Turn-Off Fall Time
tf
VDD=380V,ID=5.5A,
RG=6.8Ω,VGS=10V
4.5
8
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
11
A
Pulsed Source-drain current(Body Diode)
ISDM
TC=25°C
33
A
Forward on voltage
VSD
Tj=25°C,ISD=11A,VGS=0V
0.9
1.2
V
Reverse Recovery Time
trr
245
nS
Reverse Recovery Charge
Qrr
2.4
uC
Peak Reverse Recovery Current
Irrm
Tj=25°C,IF=11A,di/dt=100A/μs
20
A
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω



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