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MTSF1P02HD 数据表(PDF) 2 Page - ON Semiconductor |
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MTSF1P02HD 数据表(HTML) 2 Page - ON Semiconductor |
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2 / 12 page ![]() MTSF1P02HD http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) * Rating Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 20 Vdc Gate−to−Source Voltage − Continuous VGS ± 8.0 Vdc Drain Current − Continuous @ TA = 25°C (Note 2) Drain Current − Continuous @ TA = 70°C (Note 2) Drain Current − Pulsed Drain Current (Note 3) ID ID IDM 1.8 1.6 14.4 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1) Linear Derating Factor (Note 1) PD 1.8 14.3 Watts mW/ °C Total Power Dissipation @ TA = 25°C (Note 2) Linear Derating Factor (Note 2) PD 0.78 6.25 Watts mW/ °C Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C THERMAL RESISTANCE Rating Symbol Typ. Max. Unit Thermal Resistance − Junction to Ambient, PCB Mount (Note 1) Thermal Resistance − Junction to Ambient, PCB Mount (Note 2) RθJA RθJA 55 125 70 160 °C/W *Negative signs for P−Channel device omitted for clarity. 1. When mounted on 1 ″ square FR−4 or G−10 board (VGS = 4.5 V, @ Steady State) 2. When mounted on minimum recommended FR−4 or G−10 board (VGS = 4.5 V, @ Steady State) 3. Repetitive rating; pulse width limited by maximum junction temperature. |
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