MTSF1P02HD datasheet(3/12 Pages) ONSEMI

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MTSF1P02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 4)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(Cpk

≥ 2.0)

(Notes 4 & 6)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

12.8

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

µAdc

Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(Note 6)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.6

−

0.8

2.5

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(Note 6)

(VGS = 4.5 Vdc, ID = 1.8 Adc)

(VGS = 2.7 Vdc, ID = 0.9 Adc)

RDS(on)

−

120

160

190

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 0.9 Adc)

(Note 4)

gFS

2.0

4.0

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

10 Vd

0Vd

Ciss

−

440

−

Output Capacitance

(VDS = 10 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

300

−

Transfer Capacitance

f = 1.0 MHz)

Crss

−

150

−

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(on)

−

Rise Time

(VDS = 10 Vdc, ID = 1.8 Adc,

−

Turn−Off Delay Time

(VDS

10 Vdc, ID

1.8 Adc,

VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 4)

td(off)

−

Fall Time

−

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 10 Vdc, ID = 0.9 Adc,

−

Turn−Off Delay Time

(VDD

10 Vdc, ID

0.9 Adc,

VGS = 2.7 Vdc, RG = 6.0 Ω) (Note 4)

td(off)

−

Fall Time

−

Gate Charge

−

(VDS = 10 Vdc, ID = 1.8 Adc,

−

0.7

−

(VDS

10 Vdc, ID

1.8 Adc,

VGS = 4.5 Vdc)

−

5.5

−

3.8

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 1.8 Adc, VGS = 0 Vdc) (Note 4)

(IS = 1.8 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

1.24

0.9

2.0

−

Vdc

Reverse Recovery Time

trr

−

120

−

(IS = 1.8 Adc, VGS = 0 Vdc,

−

(IS

1.8 Adc, VGS

0 Vdc,

dIS/dt = 100 A/µs) (Note 4)

−

Reverse Recovery Stored Charge

QRR

−

0.223

−

µC

4. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

5. Switching characteristics are independent of operating junction temperature.

6. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

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