MTSF2P02HD datasheet(2/12 Pages) ONSEMI

2 / 12 page

MTSF2P02HD

http://onsemi.com

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Negative sign for P−Channel devices omitted for clarity

Rating

Symbol

Max

Unit

Drain−to−Source Voltage

VDSS

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

Gate−to−Source Voltage − Continuous

VGS

± 8.0

″ SQ.

FR−4 or G−10 PCB

Figure 1 below

Steady State

Thermal Resistance − Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

RTHJA

IDM

1.79

14.29

4.5

3.6

°C/W

Watts

mW/

°C

Minimum

FR−4 or G−10 PCB

Figure 2 below

Steady State

Thermal Resistance − Junction to Ambient

Total Power Dissipation @ TA = 25°C

Linear Derating Factor

Drain Current − Continuous @ TA = 25°C

Continuous @ TA = 70°C

Pulsed Drain Current (Note 1.)

RTHJA

IDM

160

0.78

6.25

3.0

2.4

°C/W

Watts

mW/

°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

1. Repetitive rating; pulse width limited by maximum junction temperature.

Figure 1. 1

, Square FR−4 or G−10 PCB

Figure 2. Minimum FR−4 or G−10 PCB

MTSF2P02HD 数据表(PDF) 2 Page - ON Semiconductor

MTSF2P02HD 数据表(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载