MTSF2P02HD datasheet(3/12 Pages) ONSEMI

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MTSF2P02HD

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 2.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(Cpk

≥ 2.0)

(Notes 2. & 4.)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

12.7

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

0.015

0.03

1.0

µAdc

Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)

IGSS

−

0.05

100

nAdc

ON CHARACTERISTICS (Note 3.)

Gate Threshold Voltage

(Cpk

≥ 2.0) (Note 4.)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

0.5

−

1.1

2.5

1.4

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(Cpk

≥ 2.0) (Note 4.)

(VGS = 4.5 Vdc, ID = 2.4 Adc)

(VGS = 2.7 Vdc, ID = 1.2 Adc)

RDS(on)

−

100

120

Ω

Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc)

(Note 2.)

gFS

2.6

4.4

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

15 Vd

0Vd

Ciss

−

550

−

Output Capacitance

(VDS = 15 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

375

−

Transfer Capacitance

f = 1.0 MHz)

Crss

−

150

−

SWITCHING CHARACTERISTICS (Note 4.)

Turn−On Delay Time

td(on)

−

Rise Time

(VDS = 10 Vdc, ID = 2.4 Adc,

−

Turn−Off Delay Time

(VDS

10 Vdc, ID

2.4 Adc,

VGS = 4.5 Vdc, RG = 6.0 Ω) (Note 2.)

td(off)

−

Fall Time

−

110

−

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 10 Vdc, ID = 1.2 Adc,

−

110

−

Turn−Off Delay Time

(VDD

10 Vdc, ID

1.2 Adc,

VGS = 2.7 Vdc, RG = 6.0 Ω) (Note 2.)

td(off)

−

Fall Time

−

Gate Charge

−

12.5

(VDS = 16 Vdc, ID = 2.4 Adc,

−

1.5

−

(VDS

16 Vdc, ID

2.4 Adc,

VGS = 4.5 Vdc) (Note 2.)

−

6.4

−

5.8

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)

(IS = 2.4 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.85

0.71

1.0

−

Vdc

Reverse Recovery Time

trr

−

179

−

(IS = 2.4 Adc, VGS = 0 Vdc,

−

(IS

2.4 Adc, VGS

0 Vdc,

dIS/dt = 100 A/µs) (Note 2.)

−

140

−

Reverse Recovery Stored Charge

QRR

−

0.28

−

µC

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

4. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

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