40714 TKIM/91212 TKIM TC-00002812/D2210QA TKIM TC-00002546 No.A1907-1/5

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2014

April, 2014

http://onsemi.com

BMS3003

P-Channel Power MOSFET

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Features

•

ON-resistance RDS(on)1=5.0mΩ (typ.)

•

Input capacitance Ciss=13200pF (typ.)

•

-4V drive

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain to Source Voltage

VDSS

--60

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--78

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

--312

A

Allowable Power Dissipation

PD

2.0

W

Tc=25°C40

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

420

mJ

Avalanche Current *2

IAV

--60

A

Note :

*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)

*2 L≤100μH, Single pulse

Package Dimensions

unit : mm (typ.)

7529-001

Ordering number : ENA1907B

1

3

2

Product & Package Information

• Package

: TO-220F-3SG

• JEITA, JEDEC

: SC-67

• Minimum Packing Quantity : 50 pcs./tube

Marking

Electrical Connection

1 : Gate

2 : Drain

3 : Source

TO-220F-3SG

10.16

0.8

1.47 MAX

4.7

2.54

2.76

12

3

0.5

2.54

2.54

3.18

(0.84)

DETAIL-A

A

EMC

FRAME

BMS3003-1E

MS3003

LOT No.