BMS3003

No.A1907-2/5

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--60

V

Zero-Gate Voltage Drain Current

IDSS

VDS=--60V, VGS=0V

--10

μA

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

V

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--39A

130

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=--39A, VGS=--10V

5.0

6.5

mΩ

RDS(on)2

ID=--39A, VGS=--4V

6.5

9.0

mΩ

Input Capacitance

Ciss

VDS=--20V, f=1MHz

13200

pF

Output Capacitance

Coss

1300

pF

Reverse Transfer Capacitance

Crss

950

pF

Turn-ON Delay Time

td(on)

See Fig.2

90

ns

Rise Time

tr

360

ns

Turn-OFF Delay Time

td(off)

1200

ns

Fall Time

tf

680

ns

Total Gate Charge

Qg

VDS=--36V, VGS=--10V, ID=--78A

285

nC

Gate to Source Charge

Qgs

35

nC

Gate to Drain “Miller” Charge

Qgd

70

nC

Diode Forward Voltage

VSD

IS=--78A, VGS=0V

--0.95

--1.5

V

Reverse Recovery Time

trr

See Fig.3

IS=--78A, VGS=0V, di/dt=--100A/μs

150

ns

Reverse Recovery Charge

Qrr

470

nC

Fig.1 Unclamped Inductive Switching Test Circuit

Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

BMS3003-1E

TO-220F-3SG

50pcs./tube

Pb Free

50Ω

≥50Ω

RG

VDD

L

BMS3003

G

S

D

0V

-10V

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID= -39A

RL=0.92Ω

VDD= -36V

VOUT

VIN

0V

-10V

VIN

BMS3003

VDD

BMS3003

L

Driver MOSFET

G

S

D

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.