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MMDF2C02ER2 数据表(PDF) 2 Page - ON Semiconductor

部件名 MMDF2C02ER2
功能描述  Power MOSFET
PDF  10 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MMDF2C02ER2 数据表(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS
−
25
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
−
−
−
−
1.0
1.0
mAdc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
−
−
−
100
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
−
1.0
2.0
3.0
Vdc
Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 2.2 Adc)
(VGS = 10 Vdc, ID = 2.0 Adc)
RDS(on)
(N)
(P)
−
−
−
−
0.100
0.250
Ohm
Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.0 Adc)
(VGS = 4.5 Vdc, ID = 1.0 Adc)
RDS(on)
(N)
(P)
−
−
−
−
0.200
0.400
Ohm
On−State Drain Current
(VDS = 5.0 Vdc, VGS = 4.5 Vdc)
ID(on)
(N)
(P)
2.0
2.0
−
−
−
−
Adc
Forward Transconductance
(VDS = 3.0 Vdc, ID = 1.5 Adc)
(VDS = 3.0 Vdc, ID = 1.0 Adc)
gFS
(N)
(P)
1.0
1.0
2.6
2.8
−
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
−
−
380
340
532
475
pF
Output Capacitance
Coss
(N)
(P)
−
−
235
220
329
300
Transfer Capacitance
Crss
(N)
(P)
−
−
55
75
110
150
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 4.5 Vdc, RG = 9.1 Ω)
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS = 5.0 Vdc, RG = 25 Ω)
td(on)
(N)
(P)
−
−
10
20
30
40
ns
Rise Time
tr
(N)
(P)
−
−
35
40
70
80
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
19
53
38
106
Fall Time
tf
(N)
(P)
−
−
25
41
50
82
Turn−On Delay Time
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
(VDD = 10 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc, RG = 6.0 Ω)
td(on)
(N)
(P)
−
−
7.0
13
21
26
Rise Time
tr
(N)
(P)
−
−
17
29
30
58
Turn−Off Delay Time
td(off)
(N)
(P)
−
−
27
30
48
60
Fall Time
tf
(N)
(P)
−
−
18
28
30
56
3. Negative signs for P−Channel device omitted for clarity.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.



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