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MMDF2C02ER2 数据表(PDF) 3 Page - ON Semiconductor |
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MMDF2C02ER2 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 10 page ![]() MMDF2C02E http://onsemi.com 3 ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 6) Characteristic Symbol Polarity Min Typ Max Unit SWITCHING CHARACTERISTICS − continued (Note 8) Total Gate Charge (VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) QT (N) (P) − − 10.6 10 30 15 nC Gate−Source Charge Q1 (N) (P) − − 1.3 1.0 − − Gate−Drain Charge Q2 (N) (P) − − 2.9 3.5 − − Q3 (N) (P) − − 2.7 3.0 − − SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C) Forward Voltage (Note 7) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc) VSD (N) (P) − − 1.0 1.5 1.4 2.0 Vdc Reverse Recovery Time see Figure 7 (IF = IS, dIS/dt = 100 A/ms) trr (N) (P) − − 34 32 66 64 ns ta (N) (P) − − 17 19 − − tb (N) (P) − − 17 12 − − QRR (N) (P) − − 0.025 0.035 − − mC 6. Negative signs for P−Channel device omitted for clarity. 7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 8. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. |
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