DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

5 of 9

www.diodes.com

January 2014

© Diodes Incorporated

DMHC4035LSD

-50 -25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

V= 5V

I= 5A

GS

D

V=

V

I= 10A

GS

D

10

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

0.5

1

1.5

2

2.5

I= 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T= 85°C

A

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

T = 125°C

A

T = 150°C

A

T= 25°C

A

T = -55°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

10

100

1000

0

5

10

15

20

25

30

35

40

Q(nC)

Figure 11 Gate Charge

0

2

4

6

8

10

02

46

8

10

12

14

V

= 20V

I=

A

DS

D

3.9

0.1

1

10

100

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

T

= 150°C

T = 25°C

J(max)

A

V

= 4.5V

Single Pulse

GS

DUT on 1 * MRP Board