DMHC4035LSD

Document number: DS36287 Rev. 1 - 2

7 of 9

www.diodes.com

January 2014

© Diodes Incorporated

DMHC4035LSD

-50 -25

0

25

50

75

100 125

150

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 19 On-Resistance Variation with Temperature

0

0.03

0.06

0.09

0.12

0.15

V= -10V

I=

A

GS

D

-10

V= 5V

I=

A

GS

D

-

-5

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 20 Gate Threshold Variation vs. Ambient Temperature

A

0.6

0.8

1

1.2

1.4

1.6

1.8

2

-I = 1mA

D

-I = 250µA

D

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 21 Diode Forward Voltage vs. Current

SD

0

3

6

9

12

15

0

0.3

0.6

0.9

1.2

1.5

T= 125 C

A

°

T= 150 C

A

°

T= 85 C

A

°

T= 25 C

A

°

T= -55 C

A

°

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 22 Typical Junction Capacitance

DS

10

100

1000

0

5

10

15

20

25

30

35

40

Q , TOTAL GATE CHARGE (nC)

Figure 23 Gate-Charge Characteristics

g

0

2

4

6

8

10

02

4

6

8

10

12

V

= -20V

I = -4.2A

DS

D

0.1

1

10

100

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 24 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

T

= 150°C

T = 25°C

J(max)

A

V

= -4.5V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W