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V23832-R511-M101 数据表(PDF) 18 Page - Infineon Technologies AG |
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V23832-R511-M101 数据表(HTML) 18 Page - Infineon Technologies AG |
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18 / 30 page ![]() V23832-T2131-M101 V23832-R121-M101 Technical Data Data Sheet 18 2003-11-19 The electro-optical characteristics described in the following tables are valid only for use under the recommended operating conditions. Transmitter Electrical Characteristics Parameter Symbol Values Unit min. typ. max. Supply Current 1) 1) Measured at the recommended case temperature of T case =45°C. For Tcase = 0°C a decrease of approximately 10% and for T case = 80°C an increase of approximately 15% can be expected. I CC 400 450 mA Power Consumption 1) P 1.3 1.6 W Data Rate per Channel DR 500 2) 2) Specified for CID worst case pattern (disparity 72) or any pattern with a smaller disparity. The minimum data rate depends on the disparity of the used data pattern. For example, a regular clock signal (1-0 sequence) can be transmitted down to a data rate as low as 1 Mbit/s. 1600 Mbit/s LVCMOS Output Voltage Low V LVCMOSOL 0.4 V LVCMOS Output Voltage High V LVCMOSOH 2.5 V LVCMOS Input Current High/Low I LVCMOSI –100 100 µA LVCMOS Output Current High 3) 3) Source current. I LVCMOSOH 0.5 mA LVCMOS Output Current Low 4) 4) Sink current. I LVCMOSOL 4.0 mA Data Differential Input Impedance 5) 5) Data input stage. R IN 80 100 120 Ω |
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