AP9211

Document number: DS37596 Rev. 2 - 2

4 of 17

www.diodes.com

December 2015

© Diodes Incorporated

AP9211

Symbol

Parameter

Rating

Unit

-0.3 to 12

V

Charge Input Voltage

(Between VDD and VM for Protection Chip)

-0.3 to 24

V

MOSFET Drain-to-Source Voltage

24

V

MOSFET Gate-to-Source Voltage

±12

V

9.0

A

7.1

A

Power Dissipation

1,000

mW

Maximum Junction Temperature

+150

°C

Storage Temperature Range

-65 to +150

°C

—

ESD (Machine Model)

300

V

—

ESD (Human Body Model)

3,000

V

Notes:

5. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and

functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability.

6. Ratings apply to ambient temperature at +25°C. The JEDEC High-K board design used to derive this data was a 2 inch x 2 inch multilayer board with 2-

ounce internal power and ground planes and 2-ounce copper traces on the top and bottom of the board.

Recommended Operating Conditions

Symbol

Parameter

Min

Max

Unit

1.5

5.5

V

-0.3

5.5

V

Operating Ambient Temperature

-40

+85

°C