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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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PAM8014 数据表(PDF) 3 Page - Diodes Incorporated |
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PAM8014 数据表(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  PAM8014 Document number: DS38114 Rev. 1 - 2 3 of 9 www.diodes.com January 2016 © Diodes Incorporated Electrical Characteristics (@TA = +25°C, VDD = 5V, RIN = 0, Gain=18dB, RL = L(33μH)+R+L(33μH), unless otherwise specified.) Symbol Parameter Test Conditions Min Typ Max Unit VDD Supply Voltage — 2.5 — 5.5 V PO Output Power THD+N = 10%, f = 1kHz, R = 4Ω VDD = 5.0V — 3.2 — W VDD = 3.6V — 1.6 — THD+N = 1%, f = 1kHz, R = 4Ω VDD = 5.0V — 2.45 — W VDD = 3.6V — 1.3 — THD+N = 10%, f = 1kHz, R = 8Ω VDD = 5.0V — 1.8 — W VDD = 3.6V — 0.95 — THD+N = 1%, f = 1kHz, R = 8Ω VDD = 5.0V — 1.40 — W VDD = 3.6V — 0.72 — THD+N Total Harmonic Distortion Plus Noise VDD = 5.0V, PO = 1W, R = 8Ω f = 1kHz — 0.17 — % VDD = 3.6V, PO = 0.1W, R = 8Ω — 0.16 — VDD = 5.0V, PO = 0.5W, R = 4Ω f = 1kHz — 0.14 — % VDD = 3.6V, PO = 0.2W, R = 4Ω — 0.16 — PSRR Power Supply Ripple Rejection VDD = 3.6V, Input AC-ground with C = 1μF f = 217Hz — -75 — dB f = 1kHz — -75 — Dyn Dynamic Range VDD = 5V, THD = 1%, R = 8Ω f = 1kHz — 95 — dB VN Output Noise Input AC-ground No A weighting — 60 — μV A-weighting — 40 — η Efficiency RL = 8Ω, THD = 10% f = 1kHz — 93 — % RL = 4Ω, THD = 10% — 86 — IQ Quiescent Current VDD = 5V No Load — 4 — mA ISD Shutdown Current VDD = 2.5V to 5V SD = 0V — — 1 μA RDS(ON) Static Drain-to-Source On-State Resistor High Side PMOS, I = 500mA VDD = 5.0V — 200 — mΩ Low Side NMOS, I = 500mA VDD = 5.0V — 200 — mΩ fSW Switching Frequency VDD = 2.5V to 5.5V — — 250 — kHz Gv Closed-Loop Gain VDD = 2.5V to 5.5V — — 8 — V/V RIN Input Impedance (In Chip) VDD = 2.5V to 5.5V — — 31 — KΩ tON Turn-on Time VDD = 2.5V to 5.5V — — 32 — ms OTP Over Temperature Protection VDD = 2.5V to 5.5V — — +150 — ℃ OTH Over Temperature Hysterisis VDD = 2.5V to 5.5V — — +40 — VOS Output Offset Voltage Input AC-ground, VDD = 5V — — — 20 mV VIH EN Input High Voltage VDD = 5V — 1.4 — — V VIL EN Input Low Voltage VDD = 5V — — — 1.0 |
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